Tsung-Ying Yang
0000-0001-8579-0299
Publication & Citation Trends
Publications
0 total
Comparison of Digital and Atomic Layer Etching for Gate Recess in AlGaN/GaN MOSHEMTs for Ka-band
Cited by 0
Semantic Scholar
Demonstration of high threshold voltage Tri-gate hybrid ferroelectric gate stack GaN HEMT with 1.2 GW/cm2 Baliga's figure-of-merit and highly robust TDDB stability
Cited by 3
Semantic Scholar
High-frequency and high-power AlGaN/GaN MOSHEMTs fabricated using atomic layer etching for gate recess
Cited by 1
Semantic Scholar
Enhancement Mode GaN Tri-Gate MISHEMT with Fluorine Doped Charge Trapping Layer in Hybrid Ferroelectric Gate Stack
Cited by 1
Semantic Scholar
Low-Damage Atomic Layer Etching for Contact Resistance Reduction in Millimeter Wave AlGaN/GaN HEMTs on Si
Cited by 0
Semantic Scholar
Impact of aluminum concentration variations on the performance of thin barrier enhancement-mode GaN MIS-HEMTs
Cited by 1
Semantic Scholar
Ultra-low leakage current recess-free thin barrier AlGaN/GaN Schottky diodes featuring hybrid MOS/MIS GET anodes with optimized MOS-gate length and LPCVD SiNx thickness
Cited by 2
Semantic Scholar
Improvement of the Enhancement-Mode GaN MIS-HEMTs by Fluorine Doping in the Dielectric Gate Stack
Cited by 1
Semantic Scholar
Research Topics
Antibiotic Resistance in Bacteria
(17)
Antibiotics Pharmacokinetics and Efficacy
(7)
Bone Tissue Engineering Materials
(5)
Bacterial Infections and Vaccines
(4)
Dental materials and restorations
(3)
Affiliations
South China Agricultural University
Waseda University
Kaohsiung Medical University
National Chung Hsing University
Tunghai University