S. J. Pearton
0000-0001-6498-1256
Publication & Citation Trends
Publications
0 total
On the possible nature of deep centers in Ga2O3 OA
Cited by 17
Semantic Scholar
Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers OA
Cited by 78
Semantic Scholar
Growth of (SmxGa1−x)2O3 by molecular beam epitaxy OA
Cited by 0
Semantic Scholar
Degradation by Sidewall Recombination Centers in GaN Blue micro-LEDs at Diameters < 30 um
Cited by 20
Semantic Scholar
Thermal stability of band offsets of NiO/β-GaN OA
Cited by 7
Semantic Scholar
Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates OA
Cited by 23
Semantic Scholar
Experimental estimation of electron–hole pair creation energy in β-Ga2O3 OA
Cited by 48
Semantic Scholar
1 GeV proton damage in β-Ga2O3
Cited by 10
Semantic Scholar
Research Topics
Semiconductor materials and devices
(1317)
GaN-based semiconductor devices and materials
(1275)
Ga2O3 and related materials
(833)
ZnO doping and properties
(807)
Semiconductor Quantum Structures and Devices
(394)
Affiliations
University of Stuttgart
Linköping University
Rutgers, The State University of New Jersey
Florida State University
University of Central Florida