Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal– Oxide–Semiconductor Structure
Zhiyu Guo, Jing‐Min Wu, Run Tian, Fengxuan Wang, Pengfei Xu, Xiang Yang, Zhongchao Fan, Fuhua Yang, Zhi He
IEEE Transactions on Electron Devices, 2021
Abstract
This research paper explore the methodology and findings associated with IEEE Transactions on Electron Devices. The study delves into the core aspects of the research field, providing significant data and citation impact. (Full abstract processing is available via the OpenAlex API).