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MC

M. D. Camras

Trimble (United States) US

33

Publications

1,861

Citations

18

H-Index

24

i10-Index

0

2yr Mean Cite

-

Cite/Paper

Data combined from OpenAlex + Semantic Scholar. OA = OpenAlex S2 = Semantic Scholar

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Publication & Citation Trends

Most Cited Works

Disorder of an AlAs-GaAs superlattice by impurity diffusion

W. D. Laidig, N. Holonyak, M. D. Camras, K. Hess, J. J. Coleman +2 more

Applied Physics Letters 1981

598

Disorder of an AlAs-GaAs superlattice by silicon implantation

J. J. Coleman, P.D. Dapkus, C. G. Kirkpatrick, M. D. Camras, N. Holonyak

Applied Physics Letters 1982

187

IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity

N. Holonyak, W. D. Laidig, M. D. Camras, J. J. Coleman, P.D. Dapkus

Applied Physics Letters 1981

160

Performance of high‐power III‐nitride light emitting diodes

G. Chen, Michael D. Craven, A. Kim, A. Munkholm, Satoshi Watanabe +3 more

physica status solidi (a) 2008

156

High-energy (Visible-red) stimulated emission in GaAs OA

B. A. Vojak, W. D. Laidig, N. Holonyak, M. D. Camras, J. J. Coleman +1 more

Journal of Applied Physics 1981

116

Publications

33 total

INORGANIC BONDED DEVICES AND STRUCTURES

M. Camras, J. Bhardwaj, P. Schmidt, N. J. V. D. Veen - Unknown Venue, 2017

Cited by 0 Semantic Scholar

Performance of high‐power III‐nitride light emitting diodes

G. Chen, Michael D. Craven, A. Kim, A. Munkholm, Satoshi Watanabe et al. - physica status solidi (a), 2008

Cited by 156 OpenAlex

Evidence for voltage drops at misaligned wafer-bonded interfaces of AlGaInP light-emitting diodes by electrostatic force microscopy

J. O'shea, M. Camras, D. Wynne, G. Hofler - Unknown Venue, 2001

Cited by 6 Semantic Scholar

High-performance AlGaInP light-emitting diodes

S. Maranowski, M. Camras, C. Chen, L. Cook, M. Craford - Photonics West, 1997

Cited by 4 Semantic Scholar

Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers

G. E. Höfler, D. A. Vanderwater, D.C. DeFevere, F. A. Kish, M. D. Camras et al. - Applied Physics Letters, 1996

Cited by 60 OpenAlex

Wafer bonding of 50‐mm diameter GaP to AlGaInP‐GaP light‐emitting diode wafers

G. Hofler, D. A. Vanderwater, D. Defevere, F. Kish, M. Camras - Unknown Venue, 1996

Cited by 58 Semantic Scholar

A process for producing an electro-optical device with an inverted transparent substrate.

L. Cook, M. Camras - Unknown Venue, 1989

Cited by 0 Semantic Scholar

Pressure dependence of AlxGa1−xAs light emitting diodes near the direct‐indirect transition

R. Kaliski, J. Epler, N. Holonyak, M. Peanasky, G. Herrmannsfeldt - Unknown Venue, 1985

Cited by 4 Semantic Scholar

Wavelength Modified and Strained-Layer Quantum-Well Heterostructure and Superlattice Lasers (aluminum-Gallium - Arsenide)

M. Camras - Unknown Venue, 1984

Cited by 0 Semantic Scholar

Impurity‐induced disordering of single well AlxGa1−xAs‐GaAs quantum well heterostructures

K. Meehan, J. Brown, M. Camras, N. Holonyak, R. Burnham - Unknown Venue, 1984

Cited by 9 Semantic Scholar

Research Topics

Semiconductor Quantum Structures and Devices (30) Semiconductor Lasers and Optical Devices (13) Spectroscopy and Laser Applications (9) Advanced Semiconductor Detectors and Materials (9) GaN-based semiconductor devices and materials (5)

Frequent Co-Authors

N.

N. Holonyak

13 joint publications

J.

J. J. Coleman

6 joint publications

K.

K. Hess

5 joint publications

W.

W. D. Laidig

4 joint publications

P.

P.D. Dapkus

4 joint publications

M.

M. J. Ludowise

4 joint publications

Affiliations

Hewlett-Packard (United States)

US 1997 - 1985

University of Illinois Urbana-Champaign

US 1984 - 1981

University of Illinois System

US 1982 - 1982

Trimble (United States)

US 2008 - 1996

Rockwell Automation (United States)

US 1981 - 1981

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