Wengang Bi
0000-0001-7736-8450
Publication & Citation Trends
Most Cited Works
Publications
191 total
Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes
Cited by 76
OpenAlex
Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes PDF
Cited by 48
OpenAlex
Progress in External Quantum Efficiency for III‐Nitride Based Deep Ultraviolet Light‐Emitting Diodes
Cited by 47
OpenAlex
Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency PDF
Cited by 73
OpenAlex
On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes PDF
Cited by 50
OpenAlex
A Switchable NLO Organic‐Inorganic Compound Based on Conformationally Chiral Disulfide Molecules and Bi(III)I<sub>5</sub> Iodobismuthate Networks
Cited by 249
OpenAlex
Research Topics
GaN-based semiconductor devices and materials
(66)
Semiconductor Quantum Structures and Devices
(62)
Ga2O3 and related materials
(34)
Perovskite Materials and Applications
(25)
Quantum Dots Synthesis And Properties
(25)
Frequent Co-Authors
Affiliations
Linköping University
Chongqing University of Posts and Telecommunications
Northwestern University
Beijing Institute of Technology
Centre National de la Recherche Scientifique